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QS6M4
Transistors
2.5V Drive Nch+Pch MOSFET
QS6M4
Structure
Silicon P-channel MOSFET
Silicon N-channel MOSFET
Dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
1.0MAX
0.85
0.7
Features
1) The QS6M4 combines Pch MOSFET with a Nch
(6)
(5)
(4)
0~0.1
MOSFET in a single TSMT6 package.
2) Low on-state resistance with a fast switching.
3) Low voltage drive (2.5V).
1pin mark
(1)
(2)
0.4
(3)
0.16
Each lead has same dimensions
Abbreviated symbol : M04
Applications
Load switch, inverter
Packaging specifications
Equivalent circuit
Type
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
(6)
(5)
? 1
(4)
QS6M4
Absolute maximum ratings (Ta=25 ° C)
? 2
? 1
? 2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V DSS
V GSS
I D
I DP ? 1
I S
I SP ? 1
Limits
Nchannel Pchannel
± 12 ± 12
± 1.5
± 6.0
0.8
6.0
30 ? 20
± 1.5
± 6.0
? 0.75
? 6.0
Unit
V
V
A
A
A
A
(1) (2)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(3)
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Total power dissipation
Channel temperature
Storage temperature
P D ? 2
Tch
Tstg
1.25
0.9
150
? 55 to + 150
W / TOTAL
W / ELEMENT
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
Thermal resistance
?
Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
100
139
Unit
° C / W / TOTAL
° C / W / ELEMENT
? Mounted on a ceramic board
Rev.B
1/5
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